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IEEE Transactions on Electron Devices

Journal Title

  • IEEE Transactions on Electron Devices

ISSN

  • E 1557-9646 | P 0018-9383

Publisher

  • Institute of Electrical and Electronics Engineers

Listed on(Coverage)

JCR 1997-2019
SJR 1999-2019
CiteScore 2011-2019
SCI 2010-2019
SCIE 2010-2021
CC 2016-2021
SCOPUS 2017-2020

Active

  • Active

    based on the information

    • SCOPUS:2020-10

Country

  • USA

Aime & Scopes

  • IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

Homepage

Article List

1 - 8 out of 8 results.

SCIESCOPUS
In-Depth Electrical Characterization of Carrier Transport in Tellurium/Silicon Heterojunction-Based p-n Diode

Kim, Yohan; Lim, Gyuri; Park, Byeongjin; Yoon, Jongwon; Kim, Yonghun; Jeon, Dae-Young

ArticleIssue Date2025CitationIEEE Transactions on Electron DevicesPublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures

Ryu, Minsang; Suh, Minki; Ha, Jonghyeon; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 5243 - 5246PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Back-Gate Bias-Controllable Subthreshold Slope of Junctionless Transistors

Jeon, Dae-Young; Park, So Jeong; Barraud, Sylvain; Ghibaudo, Gerard

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.7, pp 3903 - 3906PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Investigation of TID and DD Effects on FD SOI Nanowire FET Induced by Proton Irradiation

Lee, Dabok; Ha, Jonghyeon; Suh, Minki; Ryu, Minsang; Casse, Mikael; Nicoletti, Sergio; Jeon, Dae-Young; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.6, pp 2795 - 2800PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Park, Jounghun; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Sagong, Hyun Chul; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.10, pp 6040 - 6048PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory

Kim, Donghwi; Yoon, Gilsang; Go, Donghyun; Park, Jounghun; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.8, pp 4644 - 4648PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Y2O3-Based Crossbar Array for Analog and Neuromorphic Computation

Kumar, Sanjay; Kumbhar, Dhananjay D. D.; Park, Jun H. H.; Kamat, Rajanish K. K.; Dongale, Tukaram D. D.; Mukherjee, Shaibal

ArticleIssue Date2023CitationIEEE Transactions on Electron Devices, v.70, no.2, pp 1 - 5PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Single-Event Upset in 3-D Charge-Trap NAND Flash Memories

Park, Jounghun; Han, Jin-Woo; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2022CitationIEEE Transactions on Electron Devices, v.69, no.11, pp 6089 - 6094PublisherInstitute of Electrical and Electronics Engineers
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