ScholarWorks@Gyeongsang National University: Jeon, Dae Young

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Jeon, Dae Young (전대영)

IT공과대학 (전기공학과)

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Tel 0557721712
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Logic gates:3||Silicon:2||Transistors:2||Bulk Conduction:1||Capacitance:1||Carbon nanotube fiber:1||Channel Thickness:1||Channel length dependence:1||Charge carrier processes:1||Chemical Sensors:1||Cost Effective:1||Cost Effectiveness:1||Degradable electronic substrate:1||Densification:1||Displacement defect (DD):1||Electrons:1||Energy Efficiency:1||Energy Efficient:1||Equivalent circuits:1||Gatetunable Schottky barrier diodes:1||Graphene:1||Green technology:1||Heterojunctions:1||Iongated transistor:1||Junctionless Transistors:1||KPFM:1||Lowfrequency noise:1||Mathematical models:1||Mechanical and electrical properties:1||MoS<sub>2</sub> transistors:1||Nanowires:1||Optimization:1||Pn Junction:1||Pn junctions:1||Pentacene:1||Performance:1||Performance evaluation:1||Phonons:1||Resistance:1||Schottky barrier:1||Schottky barriers:1||Schottky diodes:1||Schottkybarrier dominant thermionic effect:1||Schottkybarrier transistors:1||Semiconductor Junctions:1||Semiconductor device measurement:1||Sensing Performance:1||Sensitivity Optimization:1||Sinanowires:1||Soybean oil:1||Stretching process:1||Subthreshold current:1||Technological Advancement:1||Thermionic emission:1||Tunneling:1||ambipolar fieldeffect transistors:1||amorphous oxide:1||backgate voltage (Vgb):1||bulk conduction:1||channel thickness dependence:1||channellimited conduction:1||chargetransfer complex(CTC):1||chemiresistive gas sensors:1||colorless polyimide:1||contact potential difference:1||disulfide bond:1||doublegated MoS2 transistor:1||effective barrierheight:1||electrospinning:1||electrostatically highly doped channel:1||fieldeffect mobility degradation:1||fieldeffect transistors:1||fully depleted silicononinsulator (FD SOI) nanowire fieldeffect transistor (NWFET):1||geometry dependence:1||graphene/pentacene junction:1||ideality factor:1||ionicliquid gate:1||junctionless transistors:1||junctionless transistors (JLTs):1||modeling:1||numerical simulation:1||ohmiclike contacts:1||output polarity controllable amplifiers:1||proton:1||radiationinduced narrow channel effect (RINCE):1||reduced mobility degradation:1||selfhealable:1||semiconductor nanofiber:1||series resistance:1||shoulder feature in transconductance:1||subthreshold conduction:1||subthreshold swing (SS):1||symmetry of electron and hole current:1||technology computeraided design (TCAD):1||thinmultiwalled carbon nanotube (TWCNT):1||total ionizing dose (TID):1||transparentelectrode:1||two peaks in transconductance derivative:1||2D materials:1||twodimensional semiconductor transitionmetal dichalcogenide:1||Analytical model equations:1||Analytical models:1||

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