ScholarWorks@Gyeongsang National University: Park, Jun Hong

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Park, Jun Hong (박준홍)

대학원 (나노신소재융합공학과)

Research Area: 두외 모방 차세대 반도체 소자, 워자층 기반 반도체 공정, 고신뢰의 반도체 소재 개발, Bio Inspired Semiconductor, Semiconductor Processing, Ultra-wide band gap semiconductors

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fieldeffect transistors:2||Y2O3:2||Tungsten diselenide:2||transition metal dichalcogenides:2||artificial synapses:2||surface roughness:2||CNT:2||Resistive switching:2||Graphene oxide:2||Composite:1||Density functional theory:1||Density of interface states:1||Depression:1||Domain Boundary:1||EQE:1||Electrical characterization:1||Electrical response:1||Epoxy:1||Explosives detection:1||Fog collector:1||Glass fiber composite:1||Graphene:1||HfS2:1||Highk dielectrics:1||Hydrophilic:1||MXene:1||MXenes:1||Memristor:1||Memristors:1||MoSe2:1||MoSe2, neuroplasticity:1||Molten salt flux method:1||Molybdenum disulfide (MoS2):1||NO<sub>2</sub>:1||Nanochannel switching:1||Nanofibrous web:1||Necking:1||Neuromorphic computing:1||Neuromorphic electron devices:1||Neuromorphics:1||Nonvolatile memory:1||O2 plasma:1||O2 plasma treatment:1||Optoelectronic synapse device:1||Ozone Oxidation:1||PeQDs:1||PeQLEDs:1||Poly(lactic acid):1||Polymer composite:1||Polyurea:1||Polyurethane:1||Scanning Tunneling Microscopy:1||Secondary transition metal dichalcogenides (TMDs) · Single crystal · Electronic structure · NiTe 2 · Molten salt:1||Selfhealing:1||Spiketime dependent plasticity:1||Structural Deformation:1||Switches:1||Synapses:1||Synaptic learning:1||Tensile strength:1||Timeseries analysis:1||Transistor:1||Transition metal dichalcogenide:1||Trinitrotoluene:1||Vaportransportdeposited tinsulfide:1||Voltage:1||Writing:1||antimony sulfide:1||band structure:1||chemical etching:1||chemiresistive sensor:1||contact engineering:1||crossbar:1||current density:1||electrical properties:1||electrode variation:1||electroluminescence:1||heterostructure:1||hydrocarbons:1||lightemitting diodes:1||lignin:1||linearity factor:1||luminance:1||magnetron sputtering:1||memory window engineering:1||memristor:1||memristors:1||molecular reconfiguration:1||molybdenum diselenide:1||ntype doping:1||neuromorphic computation:1||optical switching:1||optoelectrical synapses:1||oxide defects:1||perovskite:1||quantum dots:1||resistive switchings:1||scanning tunneling microscopy/spectroscopy:1||spiketimedependent plasticity (STDP):1||spiketimingdependent plasticity:1||surface passivation:1||surface science:1||synaptic application:1||synaptic behavior:1||thin film:1||titanium nitride:1||transition metal dichalcogenide:1||transitionmetal dichalcogenides:1||tungsten diselenide:1||twostep chemical functionalization:1||van der Waals stacking:1||(NH4)(2)S(aq) chemical treatment:1||vapor transport deposition:1||Adsorption:1||Al2O3 passivation:1||Alkaline treatment:1||Analog memristor:1||Artificial synapse:1||Biomaterials:1||CO<sub>2</sub>:1||Capacitancevoltage (CV):1||

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