Crop Protection

ISSN
P 0261-2194 E 1873-6904
출판사
Butterworth Scientific Ltd.
국가
ENGLAND
발행 상태
활성

데이터베이스 수록 정보

CiteScore 2011-2025 (15년)
JCR 1997-2025 (29년)
SCI 2010-2019 (10년)
SCIE 2010-2026 (17년)
Scopus 1982-2026 (45년)
SJR 1999-2020, 2022-2025 (26년)

전체 15건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

Total-Ionizing Dose Effect in 3-D Charge-Trap nand Flash Memory Cells

  • Park, Jounghun
  • Kim, Jungsik
  • Shastry, Vishwanath
  • Lee, Jeong-Soo
  • Yi, Su-in
  • 2026-06
  • IEEE Transactions on Electron Devices
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Hole Trap Extraction in Charge Trap Layer of 3-D nand Flash Memory

  • Go, Donghyun
  • Park, Jounghun
  • Kim, Donghwi
  • Ju, Jinuk
  • Kim, Seungjae
  • ... Kim, Jungsik
  • 외 1명
  • 2026-02
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
2025
Article

In-Depth Electrical Characterization of Carrier Transport in Tellurium/Silicon Heterojunction-Based p-n Diode

  • Kim, Yohan
  • Lim, Gyuri
  • Park, Byeongjin
  • Yoon, Jongwon
  • Kim, Yonghun
  • ... Jeon, Dae-Young
  • 2025-12
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
Article

Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures

  • Ryu, Minsang
  • Suh, Minki
  • Ha, Jonghyeon
  • Lee, Dabok
  • Lee, Hojoon
  • ... Kim, Jungsik
  • 외 1명
  • 2025-09
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
Article

Back-Gate Bias-Controllable Subthreshold Slope of Junctionless Transistors

  • 2025-07
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
Article

Investigation of TID and DD Effects on FD SOI Nanowire FET Induced by Proton Irradiation

  • 2025-06
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
2024
Article

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

  • Park, Jounghun
  • Yoon, Gilsang
  • Go, Donghyun
  • Kim, Donghwi
  • Sagong, Hyun Chul
  • ... Kim, Jungsik
  • 외 1명
  • 2024-10
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
Article

Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory

  • Kim, Donghwi
  • Yoon, Gilsang
  • Go, Donghyun
  • Park, Jounghun
  • Kim, Jungsik
  • 외 1명
  • 2024-08
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
Article

Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect

  • Suh, Minki
  • Ryu, Minsang
  • Ha, Jonghyeon
  • Bang, Minji
  • Lee, Dabok
  • ... Kim, Jungsik
  • 2024-04
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
2023
Article

Y2O3-Based Crossbar Array for Analog and Neuromorphic Computation

  • Kumar, Sanjay
  • Kumbhar, Dhananjay D. D.
  • Park, Jun H. H.
  • Kamat, Rajanish K. K.
  • Dongale, Tukaram D. D.
  • 외 1명
  • 2023-02
  • IEEE Transactions on Electron Devices
  • Institute of Electrical and Electronics Engineers
1