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Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics
- Park, Jounghun;
- Yoon, Gilsang;
- Go, Donghyun;
- Kim, Donghwi;
- Sagong, Hyun Chul;
- ... Kim, Jungsik;
- 외 1명
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8초록
Decompositions of charge loss mechanisms in 3-D NAND flash memory with two different cell structures have been performed using high-temperature retention characteristics. It calculates emission rates of trap-to-band tunneling (TB) and band-to-trap tunneling (BT) to determine the dominant tunneling mechanisms. The lateral migration (LM) component is separated into the LM of holes (LMH) and electrons (LME) using the technology-computer-aided design (TCAD) simulation. The thicker blocking layer could lead to decreased vertical charge loss, and the shorter spacer could enhance the LM components.
키워드
Tunneling; Logic gates; Flash memories; Attenuation; Electron traps; Electrons; Voltage measurement; 3-D NAND flash memory; charge loss mechanism; high-temperature retention characteristic; LATERAL MIGRATION; OPERATION; MODEL; SIMULATION; DEVICES
- 제목
- Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics
- 저자
- Park, Jounghun; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Sagong, Hyun Chul; Kim, Jungsik; Lee, Jeong-Soo
- 발행일
- 2024-10
- 유형
- Article
- 권
- 71
- 호
- 10
- 페이지
- 6040 ~ 6048
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers
- 발행국가
- 미국
- 분량
- 9 페이지
- ISSN
- E 1557-9646
P 0018-9383