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SCIESCOPUS
Abnormal Operation of 6-T SRAM based on Nanosheet FET due to Total Ionizing Doseopen access

Ha, Jonghyeon; Bang, Minji; Suh, Minki; Lee, Dabok; Ryu, Minsang; Han, Jin-Woo; Sagong, Hyunchul; Lee, Hojoon; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Access, v.13, pp 159639 - 159648PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAMopen access

Suh, Minki; Ryu, Minsang; Ha, Jonghyeon; Bang, Minji; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Jungsik

ArticleIssue Date2024CitationIEEE Access, v.12, pp 155119 - 155124PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Design Guideline of Saddle-Fin-Based DRAM for Mitigating Rowhammer Effect

Suh, Minki; Ryu, Minsang; Ha, Jonghyeon; Bang, Minji; Lee, Dabok; Kim, Jungsik

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.4, pp 1 - 6PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effectsopen access

Lee, Gyeongyeop; Suh, Minki; Ryu, Minsang; Lee, Yunjong; Han, Jin-Woo; Kim, Jungsik

ArticleIssue Date2023CitationIEEE Access, v.11, pp 97456 - 97465PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Investigation of TID and DD Effects on FD SOI Nanowire FET Induced by Proton Irradiation

Lee, Dabok; Ha, Jonghyeon; Suh, Minki; Ryu, Minsang; Casse, Mikael; Nicoletti, Sergio; Jeon, Dae-Young; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.6, pp 2795 - 2800PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cellopen access

Bang, Minji; Ha, Jonghyeon; Suh, Minki; Lee, Dabok; Ryu, Minsang; Han, Jin-Woo; Sagong, Hyunchul; Lee, Hojoon; Kim, Jungsik

ArticleIssue Date2024CitationIEEE Access, v.12, pp 130347 - 130355PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Radiation effect in FD-SOI nanowire FETs due to high dose rate gamma-ray under variable irradiation temperatures

Ha, Jonghyeon; Suh, Minki; Ryu, Minsang; Lee, Dabok; Jeon, Dae-Young; Kim, Jungsik

ArticleIssue Date2026CitationMicroelectronics and Reliability, v.176PublisherElsevier Ltd.
SCIESCOPUS
Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures

Ryu, Minsang; Suh, Minki; Ha, Jonghyeon; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 5243 - 5246PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperatureopen access

Ryu, Minsang; Suh, Minki; Ha, Jonghyeon; Bang, Minji; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Dong-Seok; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Access, v.13, pp 130603 - 130609PublisherInstitute of Electrical and Electronics Engineers Inc.
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