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SCIESCOPUS
Analysis of Charge Loss Decomposition and Nonlinear Ea in 3-D NAND Flash Memory Using a Neutral Cell-Based Method

Park, Jounghun; Go, Donghyun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2025CitationIEEE Electron Device Letters, v.46, no.12, pp 2273 - 2276PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Park, Jounghun; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Sagong, Hyun Chul; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.10, pp 6040 - 6048PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memoryopen access

Go, Donghyun; Yoon, Gilsang; Park, Jounghun; Kim, Donghwi; Kim, Jiwon; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2023CitationMicromachines, v.14, no.11PublisherMultidisciplinary Digital Publishing Institute (MDPI)
SCIESCOPUS
Extraction of Nitride Trap Profile in 3-D NAND Flash Memory Using Intercell Program Patternopen access

Park, Jounghun; Yoon, Gilsang; Go, Donghyun; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2021CitationIEEE ACCESS, v.9, pp 118794 - 118800PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Impact of Electron and Hole Trap Profiles in BE-TOX on Retention Characteristics of 3D NAND Flash Memory

Yoon, Gilsang; Go, Donghyun; Park, Jounghun; Kim, Donghwi; Kim, Jongwoo; An, Ukju; Kim, Jungsik; Lee, Jeong-Soo; Kong, Byoung Don

ArticleIssue Date2024CitationIEEE Transactions on Nanotechnology, v.23, pp 733 - 740PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memoryopen access

Yoon, Gilsang; Ko, Donghyun; Park, Jounghun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2022CitationIEEE Access, v.10, pp 62423 - 62428PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory

Kim, Donghwi; Yoon, Gilsang; Go, Donghyun; Park, Jounghun; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.8, pp 4644 - 4648PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Single-Event Upset in 3-D Charge-Trap NAND Flash Memories

Park, Jounghun; Han, Jin-Woo; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo

ArticleIssue Date2022CitationIEEE Transactions on Electron Devices, v.69, no.11, pp 6089 - 6094PublisherInstitute of Electrical and Electronics Engineers
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