Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memoryopen access
- Yoon, Gilsang; Ko, Donghyun; Park, Jounghun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 3D NAND flash memory; bandgap-engineered tunneling; program; erase cycling; trap profile; TSCIS
- IEEE ACCESS, v.10, pp.62423 - 62428
- Journal Title
- IEEE ACCESS
- Start Page
- End Page
- The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the distribution of traps in these layers. In the BE-TOX layer, significant traps were generated around 1.3 eV in the nitrogen-doped layer (N1) and increased by 48% in the fresh cell after P/E stress-cycling. The H bonds in the N1 are more likely to break during the stress-cycling and create neutral equivalent to SiO center dot traps. In the block layer, however, trap generation was negligible after stress-cycling.
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- 공과대학 > 전기공학과 > Journal Articles
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