Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures

Abstract

In this study, single-event upset (SEU) and total ionizing dose (TID) effects on DDR4 dynamic random access memory (DRAM) under 48-MeV proton radiation and various temperatures (153-373 K) were investigated. The SEU-induced error density reached a maximum of 5.59 x 10(-6) at 373 K and a minimum of 9.77 x 10(-10) at 153 K, which correlates with the increase in gate-induced drain leakage (GIDL) as temperature rises. After the device under test (DUT) was irradiated at 153, 300, and 373 K, the TID-induced error density was estimated. The generation of interface traps was higher at 373 K than at 153 K, leading to an increase in the TID-induced error density. However, the error density at 300 K was 1.1 times as high as that at 373 K. This occurs because the DUT irradiated at 373 K is more favorable for defect recovery via annealing than at 300 K.