The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors

Abstract

The impact of a single displacement defect on the performance of tunnelingfield-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point defect. The degradation depends on the trap energy level; the impact due to a deep trap is greater than that due to a shallow trap. The degradation becomes more profound as the defect locationmoves a certain distance fromthe source into the channel. The ON- state current is nearly unaffected by the same defect. The single defect effects were found to be more prominent for thinner channel devices.