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Cited 9 time in webofscience Cited 9 time in scopus
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The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors

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dc.contributor.authorKim, Jungsik-
dc.contributor.authorHan, Jin-Woo-
dc.contributor.authorMeyyappan, M.-
dc.date.accessioned2022-12-26T12:16:41Z-
dc.date.available2022-12-26T12:16:41Z-
dc.date.issued2020-11-
dc.identifier.issn0018-9383-
dc.identifier.issn1557-9646-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/5975-
dc.description.abstractThe impact of a single displacement defect on the performance of tunnelingfield-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point defect. The degradation depends on the trap energy level; the impact due to a deep trap is greater than that due to a shallow trap. The degradation becomes more profound as the defect locationmoves a certain distance fromthe source into the channel. The ON- state current is nearly unaffected by the same defect. The single defect effects were found to be more prominent for thinner channel devices.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleThe Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/TED.2020.3022004-
dc.identifier.scopusid2-s2.0-85094901200-
dc.identifier.wosid000584285700042-
dc.identifier.bibliographicCitationIEEE Transactions on Electron Devices, v.67, no.11, pp 4765 - 4769-
dc.citation.titleIEEE Transactions on Electron Devices-
dc.citation.volume67-
dc.citation.number11-
dc.citation.startPage4765-
dc.citation.endPage4769-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorBand-to-band tunneling (BTBT)-
dc.subject.keywordAuthordisplacement defect-
dc.subject.keywordAuthorradiation effect-
dc.subject.keywordAuthorsubthreshold swing-
dc.subject.keywordAuthorTechnology Computer-Aided Design (TCAD) simulation-
dc.subject.keywordAuthortunneling field-effect transistor (TFET)-
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