The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jungsik | - |
dc.contributor.author | Han, Jin-Woo | - |
dc.contributor.author | Meyyappan, M. | - |
dc.date.accessioned | 2022-12-26T12:16:41Z | - |
dc.date.available | 2022-12-26T12:16:41Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/5975 | - |
dc.description.abstract | The impact of a single displacement defect on the performance of tunnelingfield-effect transistors (TFETs) is studied. The OFF-state leakage current and subthreshold swing of the TFET are found to degrade by the single point defect. The degradation depends on the trap energy level; the impact due to a deep trap is greater than that due to a shallow trap. The degradation becomes more profound as the defect locationmoves a certain distance fromthe source into the channel. The ON- state current is nearly unaffected by the same defect. The single defect effects were found to be more prominent for thinner channel devices. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | The Impact of a Single Displacement Defect on Tunneling Field-Effect Transistors | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TED.2020.3022004 | - |
dc.identifier.scopusid | 2-s2.0-85094901200 | - |
dc.identifier.wosid | 000584285700042 | - |
dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.67, no.11, pp 4765 - 4769 | - |
dc.citation.title | IEEE Transactions on Electron Devices | - |
dc.citation.volume | 67 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4765 | - |
dc.citation.endPage | 4769 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | Band-to-band tunneling (BTBT) | - |
dc.subject.keywordAuthor | displacement defect | - |
dc.subject.keywordAuthor | radiation effect | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | Technology Computer-Aided Design (TCAD) simulation | - |
dc.subject.keywordAuthor | tunneling field-effect transistor (TFET) | - |
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