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NAND 전하트랩 플래시메모리를 위한 p채널 SONOS 트랜지스터의 특성The Characteristics of p-channel SONOS Transistor for the NAND Charge-trap Flash Memory
- Other Titles
- The Characteristics of p-channel SONOS Transistor for the NAND Charge-trap Flash Memory
- Issue Date
- 2009
- Publisher
- 한국전기전자재료학회
- Keywords
- p-channel SONOS; NAND flash memory; Charge-trap flash; Low programming voltage; Fast erase speed
- Citation
- 전기전자재료학회논문지, v.22, no.1, pp 7 - 11
- Pages
- 5
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 22
- Number
- 1
- Start Page
- 7
- End Page
- 11
- ISSN
- 1226-7945
2288-3258
- Abstract
- In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by 0.13 ㎛ low power standard logic process technology. The thicknesses of gate insulators are 2.0 ㎚ for the tunnel oxide, 1.4 ㎚ for the nitride layer, and 4.9 ㎚ for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.
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Collections - 융합기술공과대학 > Division of Converged Electronic Engineering > Journal Articles
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