ScholarWorks@Gyeongsang National University: Kim, Byung Cheul

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Kim, Byung Cheul (김병철)

IT공과대학 (전자공학부)

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Tel 0557723336
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SONOS:7||Overload:4||Charge pumping method:3||Nonvolatile memory:3||Phase change memory:3||Thermistors:3||Electrical properties:3||PRAM:3||Multibit:3||GF:2||highthroughput signal processing:2||Current source:2||Device lifetime:2||Arc:2||SiON:2||Low programming voltage:2||Ground Fault(GF):2||Sr)MnO3:2||Structural properties:2||System IC:2||SystemonBoard:2||Temperature:2||The Electrical Fires:2||Arc Fault Circuit Interrupter(AFCI):2||Common source line:2||Thyristor:2||Hopping conduction:2||Accelerated aging test equipment:2||Voltage:2||Fire Prevention:2||NOR type flash memory:2||(La:2||Crystallization:2||Gate oxide reliability:1||GeSbTe:1||GeSeTe:1||Highefficient power:1||Highly sensitive:1||Hopping transport:1||Hydrogen sensor:1||LED driver:1||LED lamp:1||LED lighting:1||LED lighting technology:1||La(Sr,Ca)MnO3:1||Light Flicker:1||Lighting block:1||Luminance deviation:1||Memory:1||MultiLED modules:1||Multichannel FET:1||Multilevel:1||NAND flash memory:1||NOR array:1||Nanopulse scanner:1||Nanowire:1||Nitride scaling:1||Nitrogenrich layer:1||Nonvolatile:1||Nonvolatile memory:1||Nonvolatile:1||OTS:1||Oxide/nitrogenrich layer/oxide:1||PCM:1||Palladium:1||Percent Flicker:1||Percent flicker:1||Power factor:1||Reoxidized N2O:1||Reoxidized nitrided oxide (RONO):1||SMPS:1||SONOS EEPROMS:1||SWCNT:1||Series circuit:1||Si2N2O:1||Si2NO:1||Single power supply:1||Source/drain program:1||Sputtering:1||Substratebias assisted hot electron:1||Thermal stability:1||ThreePhase Alternating Current Power:1||Threephase AC power:1||Threshold voltage:1||TwoStep Pulse Program:1||Ultrathin ONO:1||Voltage phase:1||XPS:1||block type classification:1||computation reuse:1||constant voltage and current:1||dimmer function:1||embedded vision:1||gradient magnitude calculator:1||lighting system.:1||low computational complexity:1||low power image processing.:1||lowcomplexity hardware architecture.:1||lowcomplexity signal processing:1||lowpower image processing:1||pchannel SONOS:1||pnp transistor:1||고감도:1||과부하:1||나노선:1||수소센서:1||시스템보드:1||아크:1||전기도금법:1||전기화재:1||접지결함:1||팔라듐:1||Recyclable load current:1||1×106 program/Erase cycles:1||2step pulse programming:1||3 V single power supply:1||4bit SONOS memory:1||AC(alternating current)LED:1||ACLED:1||APTES:1||Adaptive threholding:1||Alternating Current Light Emitting Diode Lamp:1||Alternating current:1||Asymmetric programming:1||Au:1||CNT:1||Canny edge detection:1||Chalcogenide:1||Channel erase:1||Charge Pumping Method:1||Charge trap:1||Charge traps:1||Chargetrap flash:1||Chargetrap flash (CTF):1||Chargetrapping medium:1||Charging circuit:1||Constant brightness:1||Control of Voltage Phase:1||Driver IC:1||Electrodeposition:1||Fast erase speed:1||Feature extraction:1||Flash memory:1||FourBitPerCell:1||GST:1||

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