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NAND 전하트랩 플래시메모리를 위한 p채널 SONOS 트랜지스터의 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김병철 | - |
| dc.contributor.author | 김주연 | - |
| dc.date.accessioned | 2022-12-27T05:22:10Z | - |
| dc.date.available | 2022-12-27T05:22:10Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.issn | 1226-7945 | - |
| dc.identifier.issn | 2288-3258 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/26478 | - |
| dc.description.abstract | In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by 0.13 ㎛ low power standard logic process technology. The thicknesses of gate insulators are 2.0 ㎚ for the tunnel oxide, 1.4 ㎚ for the nitride layer, and 4.9 ㎚ for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics. | - |
| dc.format.extent | 5 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 한국전기전자재료학회 | - |
| dc.title | NAND 전하트랩 플래시메모리를 위한 p채널 SONOS 트랜지스터의 특성 | - |
| dc.title.alternative | The Characteristics of p-channel SONOS Transistor for the NAND Charge-trap Flash Memory | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.22, no.1, pp 7 - 11 | - |
| dc.citation.title | 전기전자재료학회논문지 | - |
| dc.citation.volume | 22 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 7 | - |
| dc.citation.endPage | 11 | - |
| dc.identifier.kciid | ART001308349 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.subject.keywordAuthor | p-channel SONOS | - |
| dc.subject.keywordAuthor | NAND flash memory | - |
| dc.subject.keywordAuthor | Charge-trap flash | - |
| dc.subject.keywordAuthor | Low programming voltage | - |
| dc.subject.keywordAuthor | Fast erase speed | - |
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