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Cited 5 time in webofscience Cited 12 time in scopus
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Comparative study on the energy efficiency of logic gates based on single-electron transistor technology

Authors
Choi, ChangminLee, JieunPark, SungwookChung, In-YoungKim, Chang-JoonPark, Byung-GookKim, Dong MyongKim, Dae Hwan
Issue Date
Jun-2009
Publisher
IOP PUBLISHING LTD
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.6
Indexed
SCIE
SCOPUS
Journal Title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume
24
Number
6
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/26283
DOI
10.1088/0268-1242/23/6/065007
ISSN
0268-1242
1361-6641
Abstract
The performance and the power consumption of single-electron transistor (SET) technology-based ultra-energy-efficient signal processing circuits are compared based on the SPICE model including non-ideal effects of the experimental data for the first time. In terms of ultra-energy-efficient logic circuits, the binary decision diagram (BDD) logic circuit is the most promising with a dissipated power of 0.29 nW at V-dd = 0.1 V and f(in) = 50 MHz among the static complementary metal-oxide-semiconductor (CMOS)-like SET logic, the dynamic SET/CMOS hybrid logic, cellular nonlinear network (CNN) and BDD. This result means that the transition of a paradigm substituting the current for the voltage as a state variable of a signal processing is strongly required in post-CMOS signal processing and ultra-energy-efficient applications.
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