Comparative study on the energy efficiency of logic gates based on single-electron transistor technology
- Authors
- Choi, Changmin; Lee, Jieun; Park, Sungwook; Chung, In-Young; Kim, Chang-Joon; Park, Byung-Gook; Kim, Dong Myong; Kim, Dae Hwan
- Issue Date
- Jun-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 24
- Number
- 6
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/26283
- DOI
- 10.1088/0268-1242/23/6/065007
- ISSN
- 0268-1242
1361-6641
- Abstract
- The performance and the power consumption of single-electron transistor (SET) technology-based ultra-energy-efficient signal processing circuits are compared based on the SPICE model including non-ideal effects of the experimental data for the first time. In terms of ultra-energy-efficient logic circuits, the binary decision diagram (BDD) logic circuit is the most promising with a dissipated power of 0.29 nW at V-dd = 0.1 V and f(in) = 50 MHz among the static complementary metal-oxide-semiconductor (CMOS)-like SET logic, the dynamic SET/CMOS hybrid logic, cellular nonlinear network (CNN) and BDD. This result means that the transition of a paradigm substituting the current for the voltage as a state variable of a signal processing is strongly required in post-CMOS signal processing and ultra-energy-efficient applications.
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Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

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