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Comparative study on the energy efficiency of logic gates based on single-electron transistor technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Changmin | - |
| dc.contributor.author | Lee, Jieun | - |
| dc.contributor.author | Park, Sungwook | - |
| dc.contributor.author | Chung, In-Young | - |
| dc.contributor.author | Kim, Chang-Joon | - |
| dc.contributor.author | Park, Byung-Gook | - |
| dc.contributor.author | Kim, Dong Myong | - |
| dc.contributor.author | Kim, Dae Hwan | - |
| dc.date.accessioned | 2022-12-27T05:11:14Z | - |
| dc.date.available | 2022-12-27T05:11:14Z | - |
| dc.date.issued | 2009-06 | - |
| dc.identifier.issn | 0268-1242 | - |
| dc.identifier.issn | 1361-6641 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/26283 | - |
| dc.description.abstract | The performance and the power consumption of single-electron transistor (SET) technology-based ultra-energy-efficient signal processing circuits are compared based on the SPICE model including non-ideal effects of the experimental data for the first time. In terms of ultra-energy-efficient logic circuits, the binary decision diagram (BDD) logic circuit is the most promising with a dissipated power of 0.29 nW at V-dd = 0.1 V and f(in) = 50 MHz among the static complementary metal-oxide-semiconductor (CMOS)-like SET logic, the dynamic SET/CMOS hybrid logic, cellular nonlinear network (CNN) and BDD. This result means that the transition of a paradigm substituting the current for the voltage as a state variable of a signal processing is strongly required in post-CMOS signal processing and ultra-energy-efficient applications. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Comparative study on the energy efficiency of logic gates based on single-electron transistor technology | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1088/0268-1242/23/6/065007 | - |
| dc.identifier.scopusid | 2-s2.0-78349257054 | - |
| dc.identifier.wosid | 000266287000015 | - |
| dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.6 | - |
| dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
| dc.citation.volume | 24 | - |
| dc.citation.number | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | TO-DIGITAL CONVERTER | - |
| dc.subject.keywordPlus | CELLULAR NEURAL-NETWORKS | - |
| dc.subject.keywordPlus | SET MODEL | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | DESIGN | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordPlus | MAJORITY | - |
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