Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistorsopen access
- Lee, Gyeongyeop; Ha, Jonghyeon; Kim, Kihyun; Bae, Hagyoul; Kim, Chong-Eun; Kim, Jungsik
- Issue Date
- displacement defect; radiation effect; SiC MOSFET; TCAD simulation
- MICROMACHINES, v.13, no.6
- Journal Title
- The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with E-C - 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.
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- 공과대학 > 전기공학과 > Journal Articles
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