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SCIESCOPUS
Abnormal Operation of 6-T SRAM based on Nanosheet FET due to Total Ionizing Doseopen access

Ha, Jonghyeon; Bang, Minji; Suh, Minki; Lee, Dabok; Ryu, Minsang; Han, Jin-Woo; Sagong, Hyunchul; Lee, Hojoon; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Access, v.13, pp 159639 - 159648PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAMopen access

Suh, Minki; Ryu, Minsang; Ha, Jonghyeon; Bang, Minji; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Jungsik

ArticleIssue Date2024CitationIEEE Access, v.12, pp 155119 - 155124PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cellopen access

Bang, Minji; Ha, Jonghyeon; Suh, Minki; Lee, Dabok; Ryu, Minsang; Han, Jin-Woo; Sagong, Hyunchul; Lee, Hojoon; Kim, Jungsik

ArticleIssue Date2024CitationIEEE Access, v.12, pp 130347 - 130355PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Single-Event Upset and Total Ionizing Dose Effects on DDR4 DRAM Due to Proton Irradiation Under Different Temperatures

Ryu, Minsang; Suh, Minki; Ha, Jonghyeon; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.9, pp 5243 - 5246PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperatureopen access

Ryu, Minsang; Suh, Minki; Ha, Jonghyeon; Bang, Minji; Lee, Dabok; Lee, Hojoon; Sagong, Hyunchul; Kim, Dong-Seok; Kim, Jungsik

ArticleIssue Date2025CitationIEEE Access, v.13, pp 130603 - 130609PublisherInstitute of Electrical and Electronics Engineers Inc.
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