Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs

Abstract

This transaction proposes a symmetric bistaggered dual-gate organic thin-film transistor (TFT) to minimize the difference between the top and bottom channel current characteristics and demonstrates it through experiment and 2-D simulation. In dual-gate organic TFTs, asymmetric top and bottom channel currents are mainly a result of their asymmetric contact geometry. To address this geometric limitation, the contact electrodes were sandwiched between the two organic semiconductor layers to be placed in a staggered position to both top and bottom gates. Two-way current crowding at the bistaggered contact electrodes leads to high-charge injection efficiency in both channels.