Impact of displacement defect on laterally diffused MOS (LDMOS) using numerical simulation

Abstract

"The effect of displacement defect due to radiation effect is investigated in laterally diffused metal oxide semiconductor (LDMOS) using technology computer-aided design (TCAD) simulation. The displacement defect with acceptor-like trap of deep level (Ec-0.4eV) under shallow trench isolation (STI) induces the worst degradation of Id-Vg characteristic. The location of defect under STI with lightly doping concentration is the worst position to transfer characteristic of Id-Vg. For breakdown voltage characteristic, the positions and types of displacement trap are negligible, because of high drain voltage operation. Copyright ? The Korean Institute of Electrical Engineers