Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Abstract

Decompositions of charge loss mechanisms in 3-D NAND flash memory with two different cell structures have been performed using high-temperature retention characteristics. It calculates emission rates of trap-to-band tunneling (TB) and band-to-trap tunneling (BT) to determine the dominant tunneling mechanisms. The lateral migration (LM) component is separated into the LM of holes (LMH) and electrons (LME) using the technology-computer-aided design (TCAD) simulation. The thicker blocking layer could lead to decreased vertical charge loss, and the shorter spacer could enhance the LM components.