The study on fatigue lifetime evaluation on the interconnect of diaphragm type pressure sensor according to various
- Authors
- Huh, S.-C.; Shim, J.-J.; Choi, J.-H.; Kweon, J.-H.
- Issue Date
- Aug-2008
- Keywords
- Diaphragm type pressure sensor; Fatigue lifetime; Interconnect; Low cycle fatigue
- Citation
- Journal of Computational and Theoretical Nanoscience, v.5, no.8, pp 1763 - 1767
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Computational and Theoretical Nanoscience
- Volume
- 5
- Number
- 8
- Start Page
- 1763
- End Page
- 1767
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/71223
- DOI
- 10.1166/jctn.2008.870
- ISSN
- 1546-1955
1546-1963
- Abstract
- Recently, the studies on various semiconductor pressure sensors have been implemented in many fields and those sensors are a typical application instance of MEMS technology. But a few papers about the effect of thermal cyclic load on the fatigue properties of metal interconnect have been published compared with metal film. Therefore this paper showed the endurance lifetime of each metal interconnects in the diaphragm type pressure sensor and analyzed the fatigue properties of a bi-layer interconnect according to variation of materials. The change of the Al layer position has no effect on the fatigue lifetime and lifetime of Al interconnect in bi-layers is longer about 2.25% than that of one layer. And the critical temperature of the Al, Cu and Au interconnect ensuring an operating life of ten years was calculated as 95.4 °C, 169.9 °C and 293.0 °C using the approximation fatigue lifetime equation, respectively. Copyright © 2008 American Scientific Publishers. All rights reserved.
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Collections - 공학계열 > 기계항공우주공학부 > Journal Articles

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