Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
서미스터 소자로의 응용을 위한 솔-젤법으로 제작한 (La0.7Sr0.3)(Mn1-xFex)O3 박막의 구조적, 전기적 특성Structural and Electrical Properties of (La0.7Sr0.3)(Mn1-xFex)O3 Thin Films Prepared by Sol-Gel Method for Thermistor Devices
- Other Titles
- Structural and Electrical Properties of (La0.7Sr0.3)(Mn1-xFex)O3 Thin Films Prepared by Sol-Gel Method for Thermistor Devices
- Issue Date
- Mar-2024
- Publisher
- 한국전기전자재료학회
- Keywords
- (La0.7Sr0.3)(Mn1-xFex)O3 films; Sol-gel method; Structural properties; Electrical properties; TCR; B-value
- Citation
- 전기전자재료학회논문지, v.37, no.2, pp 164 - 168
- Pages
- 5
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 37
- Number
- 2
- Start Page
- 164
- End Page
- 168
- ISSN
- 1226-7945
2288-3258
- Abstract
- (La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.