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서미스터 소자로의 응용을 위한 솔-젤법으로 제작한 (La0.7Sr0.3)(Mn1-xFex)O3 박막의 구조적, 전기적 특성

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dc.contributor.author육지수-
dc.contributor.author이삼행-
dc.contributor.author이명규-
dc.contributor.author박주석-
dc.contributor.author김영곤-
dc.contributor.author이성갑-
dc.date.accessioned2024-03-09T02:32:05Z-
dc.date.available2024-03-09T02:32:05Z-
dc.date.issued2024-03-
dc.identifier.issn1226-7945-
dc.identifier.issn2288-3258-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/69866-
dc.description.abstract(La0.7Sr0.3)(Mn1-xFex)O3 (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO2/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B25/65-value increased. Electrical resistivity, TCR and B25/65-value of the (La0.7Sr0.3)(Mn0.88Fe0.12)O3 thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott’s VRH model.-
dc.format.extent5-
dc.language한국어-
dc.language.isoKOR-
dc.publisher한국전기전자재료학회-
dc.title서미스터 소자로의 응용을 위한 솔-젤법으로 제작한 (La0.7Sr0.3)(Mn1-xFex)O3 박막의 구조적, 전기적 특성-
dc.title.alternativeStructural and Electrical Properties of (La0.7Sr0.3)(Mn1-xFex)O3 Thin Films Prepared by Sol-Gel Method for Thermistor Devices-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.4313/JKEM.2024.37.2.6-
dc.identifier.bibliographicCitation전기전자재료학회논문지, v.37, no.2, pp 164 - 168-
dc.citation.title전기전자재료학회논문지-
dc.citation.volume37-
dc.citation.number2-
dc.citation.startPage164-
dc.citation.endPage168-
dc.identifier.kciidART003054974-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthor(La0.7Sr0.3)(Mn1-xFex)O3 films-
dc.subject.keywordAuthorSol-gel method-
dc.subject.keywordAuthorStructural properties-
dc.subject.keywordAuthorElectrical properties-
dc.subject.keywordAuthorTCR-
dc.subject.keywordAuthorB-value-
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