Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Channel Thickness-Dependent Degradation of Field-Effect Mobility in Multilayer MoS2 Transistors

Authors
Jeon, Dae-YoungJoo, SoyunLee, DahyunHong, Seungbum
Issue Date
Dec-2023
Publisher
American Chemical Society
Keywords
bulk conduction; channel thickness dependence; contact potential difference; field-effect mobility degradation; KPFM; MoS<sub>2</sub> transistors; numerical simulation
Citation
ACS Applied Electronic Materials, v.6, no.1, pp 465 - 471
Pages
7
Indexed
SCIE
SCOPUS
Journal Title
ACS Applied Electronic Materials
Volume
6
Number
1
Start Page
465
End Page
471
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/69356
DOI
10.1021/acsaelm.3c01461
ISSN
2637-6113
2637-6113
Abstract
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) may serve as state-of-the-art logic devices as we progress toward the 2 nm technology node. Here, we show that mobility degradation is influenced by the channel thickness of multilayer MoS2 transistors. Thicker MoS2 channels exhibited less degradation of field-effect mobility caused by the transverse electric field (E-field), given the considerable bulk conduction current. Kelvin probe force microscopy (KPFM) was used to measure the channel thickness-dependent contact potential difference gradient. Numerical simulation confirmed that the vertical E-field was well screened by the bulk conduction channel. The results enhance our understanding of multilayer MoS2 transistor operation and will enable performance optimization. © 2023 American Chemical Society
Files in This Item
There are no files associated with this item.
Appears in
Collections
공과대학 > 전기공학과 > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE