Channel Thickness-Dependent Degradation of Field-Effect Mobility in Multilayer MoS2 Transistors
- Authors
- Jeon, Dae-Young; Joo, Soyun; Lee, Dahyun; Hong, Seungbum
- Issue Date
- Dec-2023
- Publisher
- American Chemical Society
- Keywords
- bulk conduction; channel thickness dependence; contact potential difference; field-effect mobility degradation; KPFM; MoS<sub>2</sub> transistors; numerical simulation
- Citation
- ACS Applied Electronic Materials, v.6, no.1, pp 465 - 471
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Electronic Materials
- Volume
- 6
- Number
- 1
- Start Page
- 465
- End Page
- 471
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/69356
- DOI
- 10.1021/acsaelm.3c01461
- ISSN
- 2637-6113
2637-6113
- Abstract
- Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) may serve as state-of-the-art logic devices as we progress toward the 2 nm technology node. Here, we show that mobility degradation is influenced by the channel thickness of multilayer MoS2 transistors. Thicker MoS2 channels exhibited less degradation of field-effect mobility caused by the transverse electric field (E-field), given the considerable bulk conduction current. Kelvin probe force microscopy (KPFM) was used to measure the channel thickness-dependent contact potential difference gradient. Numerical simulation confirmed that the vertical E-field was well screened by the bulk conduction channel. The results enhance our understanding of multilayer MoS2 transistor operation and will enable performance optimization. © 2023 American Chemical Society
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