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Cited 12 time in webofscience Cited 14 time in scopus
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Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent

Authors
Hong, M.Youn, J.Ryu, K.Y.Shafian, S.Kim, K.
Issue Date
Apr-2023
Publisher
American Chemical Society
Keywords
burn-in free organic photovoltaic device; non-fullerene acceptor; organic photovoltaic device stability; photoactive layer/electrode interface; sequential deposition process
Citation
ACS Applied Materials and Interfaces, v.15, no.16, pp 20151 - 20158
Pages
8
Indexed
SCIE
SCOPUS
Journal Title
ACS Applied Materials and Interfaces
Volume
15
Number
16
Start Page
20151
End Page
20158
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/59433
DOI
10.1021/acsami.3c02071
ISSN
1944-8244
1944-8252
Abstract
The development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV. © 2023 American Chemical Society.
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