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Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, M. | - |
| dc.contributor.author | Youn, J. | - |
| dc.contributor.author | Ryu, K.Y. | - |
| dc.contributor.author | Shafian, S. | - |
| dc.contributor.author | Kim, K. | - |
| dc.date.accessioned | 2023-05-16T01:40:20Z | - |
| dc.date.available | 2023-05-16T01:40:20Z | - |
| dc.date.issued | 2023-04 | - |
| dc.identifier.issn | 1944-8244 | - |
| dc.identifier.issn | 1944-8252 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/59433 | - |
| dc.description.abstract | The development of organic photovoltaic (OPV) devices based on non-fullerene acceptors (NFAs) has led to a rapid improvement in their efficiency. Despite these improvements, significant performance degradation in the early stages of operation, known as burn-in, remains a challenge for NFA-based OPVs. To address this challenge, this study demonstrates a stable NFA-based OPV fabricated using sequential deposition (SqD) and a quasi-orthogonal solvent. The quasi-orthogonal solvent, which is prepared by incorporating 1-chloronaphthalene (1-CN) into dichloromethane (DCM), reduces the vapor pressure of the solvent and allows for the efficient dissolution and penetration of the Y6 (one of efficient NFAs) into a PM6 polymer-donor layer without damaging the latter. The resulting bulk heterojunction (BHJ) is characterized by a higher degree of crystallinity in the PM6 domains than that prepared using a conventional single-step deposition (SD) process. The OPV fabricated using the SqD process exhibits a PCE of 14.1% and demonstrates superior thermal stability to the SD-processed OPV. This study conclusively reveals that the formation of a thermally stable interface between the photoactive layer and the electron-transport layer (ETL) is the primary factor contributing to the high thermal stability observed in the SqD-processed OPV. © 2023 American Chemical Society. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Chemical Society | - |
| dc.title | Improving the Stability of Non-fullerene-Based Organic Photovoltaics through Sequential Deposition and Utilization of a Quasi-orthogonal Solvent | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1021/acsami.3c02071 | - |
| dc.identifier.scopusid | 2-s2.0-85154067675 | - |
| dc.identifier.wosid | 000980514300001 | - |
| dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.15, no.16, pp 20151 - 20158 | - |
| dc.citation.title | ACS Applied Materials and Interfaces | - |
| dc.citation.volume | 15 | - |
| dc.citation.number | 16 | - |
| dc.citation.startPage | 20151 | - |
| dc.citation.endPage | 20158 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordAuthor | burn-in free organic photovoltaic device | - |
| dc.subject.keywordAuthor | non-fullerene acceptor | - |
| dc.subject.keywordAuthor | organic photovoltaic device stability | - |
| dc.subject.keywordAuthor | photoactive layer/electrode interface | - |
| dc.subject.keywordAuthor | sequential deposition process | - |
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