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Cited 10 time in webofscience Cited 12 time in scopus
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Minimization of Abnormal Output Voltage Rising for LLC Resonant Converter at Very Light Load

Authors
Kim, Chong-Eun
Issue Date
Dec-2020
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Abnormal output voltage rising; gallium nitride field-effect transistor (GaN FET); LLC resonant converter; silicon field-effect transistor (Si FET); very light load
Citation
IEEE Transactions on Industrial Electronics, v.67, no.12, pp 10295 - 10303
Pages
9
Indexed
SCIE
SCOPUS
Journal Title
IEEE Transactions on Industrial Electronics
Volume
67
Number
12
Start Page
10295
End Page
10303
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/5876
DOI
10.1109/TIE.2019.2960730
ISSN
0278-0046
1557-9948
Abstract
An LLC resonant converter is a very attractive topology for high efficiency and high power density applications, thanks to zero-voltage switching of primary switches and zero-current switching of secondary rectifiers as well as low-voltage stress of the overall components. Its critical drawback is the unintended increase of output voltage beyond the regulation limit at very light load, in spite of much higher switching frequency for low input-to-output voltage gain. To suppress output voltage within the regulation range at very light load, the external capacitor attached across drain-source of primary switches is investigated and the optimal capacitance is designed in this article. Its validity is verified experimentally with the implemented 240-W prototype for flat-panel display application.
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