Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes
- Kim, Junmo; Hwang, Jeong Ha; Kwon, Yong Woo; Bae, Hyeong Woo; An, Myungchan; Lee, Wonho; Lee, Donggu
- Issue Date
- SiNx; Thin film encapsulation; Hydrogen; Top-emission organic light-emitting diode (TEOLED); Low-temperature plasma-enhanced chemical vapor deposition (PECVD)
- ORGANIC ELECTRONICS, v.97
- Journal Title
- ORGANIC ELECTRONICS
- In this work, we developed a single high-performance SiNx encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 degrees C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 x 10(-5) g/m(2).day. To verify the stability of the PECVD process, we applied the SiNx encapsulation layer directly to top-emitting organic lightemitting diodes. The results showed minor changes in the current-density-voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.
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- 공과대학 > 반도체공학과 > Journal Articles
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