Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes

Abstract

In this work, we developed a single high-performance SiNx encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 degrees C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 x 10(-5) g/m(2).day. To verify the stability of the PECVD process, we applied the SiNx encapsulation layer directly to top-emitting organic lightemitting diodes. The results showed minor changes in the current-density-voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.