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Single-Event Upset in 3-D Charge-Trap NAND Flash Memories
- Authors
- Park, Jounghun; Han, Jin-Woo; Yoon, Gilsang; Go, Donghyun; Kim, Donghwi; Kim, Jungsik; Lee, Jeong-Soo
- Issue Date
- Nov-2022
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- 3-D NAND flash memory; radiation; single-event upset (SEU); technology-computer-aided design (TCAD) simulation
- Citation
- IEEE Transactions on Electron Devices, v.69, no.11, pp 6089 - 6094
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Electron Devices
- Volume
- 69
- Number
- 11
- Start Page
- 6089
- End Page
- 6094
- ISSN
- 0018-9383
1557-9646
- Abstract
- The effects of single-event upset (SEU) on the 2 threshold voltage (V-T) of a programmed cell in 3-D chargetrap (CT) NAND flash memory have been investigated using 3-D technology-computer-aideddesign (TCAD) simulations. After ion strikes, the surrounding electric field ( E- field) accelerates the generated holes into the CT layer (CTL), which lowers V-T of the programmed cell. The tunneling oxide (TOX) strike causes a more severe V-T shift than the blocking oxide (BOX) strike due to the higher E- field in the TOX layer. As the strike angle increases from 0 degrees(lateral) to 90 degrees (vertical), the effective irradiation volume is reduced, resulting in the mitigation of the SEU influence. Scaling of cell dimensions becomesmore vulnerable to SEU except for the thinner TOX.
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