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Ferroelectric properties of Pb(Zr,Ti)O-3 films fabricated using a modified sol-gel based process
- Authors
- Park, Sang-Man; Lee, Sung-Gap; Yun, Sang-Eun
- Issue Date
- 30-Jun-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- sol-gel; films; ferroelectric; porosity; PZT
- Citation
- THIN SOLID FILMS, v.516, no.16, pp 5282 - 5286
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 516
- Number
- 16
- Start Page
- 5282
- End Page
- 5286
- ISSN
- 0040-6090
- Abstract
- Ferroelectric PZT(20/80) thick films were fabricated by the screen printing method. And the PZT precursor solution was spin-coated on the PZT thick films to obtain a densification. Electrical properties of the thick films as a function of the firing temperature of the PZT precursor solution were investigated. The thickness of all thick films was approximately 60-62 mu m. The porosity increased with increasing the firing temperature of the sol, and the porous microstructure and some large pores were observed above 700 degrees C due to the PbO evaporation. The relative dielectric constant, remanent polarization and dielectric breakdown strength of the specimen fired at 650 degrees C were 222, 16.5 mu C/cm(2) and 73 kV/cm, respectively. (C) 2007 Elsevier B.V. All rights reserved.
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