Ferroelectric properties of Pb(Zr,Ti)O-3 films fabricated using a modified sol-gel based process

Abstract

Ferroelectric PZT(20/80) thick films were fabricated by the screen printing method. And the PZT precursor solution was spin-coated on the PZT thick films to obtain a densification. Electrical properties of the thick films as a function of the firing temperature of the PZT precursor solution were investigated. The thickness of all thick films was approximately 60-62 mu m. The porosity increased with increasing the firing temperature of the sol, and the porous microstructure and some large pores were observed above 700 degrees C due to the PbO evaporation. The relative dielectric constant, remanent polarization and dielectric breakdown strength of the specimen fired at 650 degrees C were 222, 16.5 mu C/cm(2) and 73 kV/cm, respectively. (C) 2007 Elsevier B.V. All rights reserved.