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Synthesis and Characterization of Naphthalene End-Capped Divinylbenzene for OTFT
- Issue Date
- Sep-2009
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Field-effect transistor; semiconductor; oxidation stability; mobility
- Citation
- Journal of Electronic Materials, v.38, no.9, pp 2000 - 2005
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Electronic Materials
- Volume
- 38
- Number
- 9
- Start Page
- 2000
- End Page
- 2005
- ISSN
- 0361-5235
1543-186X
- Abstract
- An organic field-effect transistor was fabricated based on a thin film of 1,4-bis-(2-naphthalen-2-ylvinyl)benzene (BNDV). The organic semiconductor was deposited via thermal evaporation on a chemically modified silicon dioxide surface. The thermal, optical, electronic, and surface properties of the BNDV compound were investigated by thermogravimetric analysis, differential scanning calorimetry, ultraviolet-visible (UV-vis) absorption, photoluminescence spectroscopies, cyclic voltammetry, x-ray diffraction, and atomic force microscopy. The BNDV had good oxidation stability and exhibited a field-effect performance with a mobility of 0.062 cm(2)/V s, a subthreshold slope of 0.4 V, and an on/off ratio of 2.45 x 10(5).
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