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Electrical properties of vanadium tungsten oxide thin films
- Issue Date
- Mar-2010
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Thin film; Sputtering; Dielectric properties; Crystal structure
- Citation
- MATERIALS RESEARCH BULLETIN, v.45, no.3, pp 291 - 294
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 45
- Number
- 3
- Start Page
- 291
- End Page
- 294
- ISSN
- 0025-5408
1873-4227
- Abstract
- The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V1.85W0.15O5 thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V1.85W0.15O5 thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V1.85W0.15O5 thin films annealed at 400 degrees C were 44, with a dielectric loss of 0.83%. The TCR values of the V1.85W0.15O5 thin films annealed at 400 degrees C were about -3.45%/K. (C) 2009 Elsevier Ltd. All rights reserved.
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