Detailed Information
Cited 16 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Electrical properties of vanadium tungsten oxide thin films
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Nam, Sung-Pill | - |
| dc.contributor.author | Noh, Hyun-Ji | - |
| dc.contributor.author | Lee, Sung-Gap | - |
| dc.contributor.author | Lee, Young-Hie | - |
| dc.date.accessioned | 2022-12-27T04:19:37Z | - |
| dc.date.available | 2022-12-27T04:19:37Z | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.issn | 0025-5408 | - |
| dc.identifier.issn | 1873-4227 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/25192 | - |
| dc.description.abstract | The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V1.85W0.15O5 thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V1.85W0.15O5 thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V1.85W0.15O5 thin films annealed at 400 degrees C were 44, with a dielectric loss of 0.83%. The TCR values of the V1.85W0.15O5 thin films annealed at 400 degrees C were about -3.45%/K. (C) 2009 Elsevier Ltd. All rights reserved. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | Electrical properties of vanadium tungsten oxide thin films | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1016/j.materresbull.2009.12.028 | - |
| dc.identifier.wosid | 000275778500011 | - |
| dc.identifier.bibliographicCitation | MATERIALS RESEARCH BULLETIN, v.45, no.3, pp 291 - 294 | - |
| dc.citation.title | MATERIALS RESEARCH BULLETIN | - |
| dc.citation.volume | 45 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 291 | - |
| dc.citation.endPage | 294 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordAuthor | Thin film | - |
| dc.subject.keywordAuthor | Sputtering | - |
| dc.subject.keywordAuthor | Dielectric properties | - |
| dc.subject.keywordAuthor | Crystal structure | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.