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Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy
- Authors
- Kim, Bo-min; Cho, Gyu-bong; Noh, Jung-pil; Ahn, Hyo-jun; Choi, Eun-soo; Miyazaki, Shuichi; Nam, Tae-hyun
- Issue Date
- 14-May-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Shape memory alloys (SMA); Coating; Silicon thin film; Tension test; Martensitic phase transformation; Anode
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.497, no.1-2, pp L13 - L16
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 497
- Number
- 1-2
- Start Page
- L13
- End Page
- L16
- ISSN
- 0925-8388
1873-4669
- Abstract
- Silicon thin film annealed at 973 K for 7 2 ks after being deposited on a Ti-50.3Ni(at%) substrate was not detached from the substrate after 2 2% tensile deformation, which was ascribed to a diffusion bonding between the Si film and substrate. The B2-B19' transformation start temperature (M(s)) of the Ti-Ni substrate with Si thin film increased by annealing, which was ascribed to a tensile stress developed by the difference in thermal expansion coefficient between the Si film and substrate (C) 2010 Elsevier B.V. All rights reserved
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