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Shape memory effect-induced crack closure in Si thin film deposited on a Ti-50.3Ni (at%) alloy substrate
- Authors
- Cho, Gyu-bong; Kim, Bo-min; Choi, Hee-jin; Noh, Jung-pil; Choi, Si-young; Ahn, Hyo-jun; Miyazaki, Shuichi; Nam, Tae-hyun
- Issue Date
- 24-Sep-2010
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Shape memory alloys (SMA); Sputtering; Scanning electron microscopy (SEM); Interface structure; Crack closure
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.507, no.1, pp L8 - L12
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 507
- Number
- 1
- Start Page
- L8
- End Page
- L12
- ISSN
- 0925-8388
1873-4669
- Abstract
- Cracks developed by tensile loading in the Si thin film deposited on the Ti-50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K. (C) 2010 Elsevier B.V. All rights reserved.
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