Cited 6 time in
Shape memory effect-induced crack closure in Si thin film deposited on a Ti-50.3Ni (at%) alloy substrate
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Gyu-bong | - |
| dc.contributor.author | Kim, Bo-min | - |
| dc.contributor.author | Choi, Hee-jin | - |
| dc.contributor.author | Noh, Jung-pil | - |
| dc.contributor.author | Choi, Si-young | - |
| dc.contributor.author | Ahn, Hyo-jun | - |
| dc.contributor.author | Miyazaki, Shuichi | - |
| dc.contributor.author | Nam, Tae-hyun | - |
| dc.date.accessioned | 2022-12-27T04:06:02Z | - |
| dc.date.available | 2022-12-27T04:06:02Z | - |
| dc.date.issued | 2010-09-24 | - |
| dc.identifier.issn | 0925-8388 | - |
| dc.identifier.issn | 1873-4669 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/24944 | - |
| dc.description.abstract | Cracks developed by tensile loading in the Si thin film deposited on the Ti-50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K. (C) 2010 Elsevier B.V. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.title | Shape memory effect-induced crack closure in Si thin film deposited on a Ti-50.3Ni (at%) alloy substrate | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.1016/j.jallcom.2010.07.136 | - |
| dc.identifier.scopusid | 2-s2.0-77956616232 | - |
| dc.identifier.wosid | 000283005300003 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.507, no.1, pp L8 - L12 | - |
| dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
| dc.citation.volume | 507 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | L8 | - |
| dc.citation.endPage | L12 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
| dc.subject.keywordPlus | LI-ION BATTERIES | - |
| dc.subject.keywordPlus | NI | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordPlus | ANODE | - |
| dc.subject.keywordPlus | SYSTEM | - |
| dc.subject.keywordPlus | ELECTRODE | - |
| dc.subject.keywordPlus | BEHAVIOR | - |
| dc.subject.keywordAuthor | Shape memory alloys (SMA) | - |
| dc.subject.keywordAuthor | Sputtering | - |
| dc.subject.keywordAuthor | Scanning electron microscopy (SEM) | - |
| dc.subject.keywordAuthor | Interface structure | - |
| dc.subject.keywordAuthor | Crack closure | - |
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