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Synthesis and studies on 2-hexylbithiophene end-capped oligomer for OTFT
- Authors
- Kang, Sohee; Kang, Moon Seong; Park, Jong Won; Kang, Pengtao; Yi, Mi Hye; Kwon, Soon-Ki; Kim, Yun-Hi
- Issue Date
- Nov-2010
- Publisher
- The Korean Physical Society
- Keywords
- Organic semiconductor; TFT (thin film transistor); Hole mobility
- Citation
- Current Applied Physics, v.10, no.4, pp E166 - E170
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- Current Applied Physics
- Volume
- 10
- Number
- 4
- Start Page
- E166
- End Page
- E170
- ISSN
- 1567-1739
1878-1675
- Abstract
- The new organic semiconductor which is composed of divinylbenzene core unit and hexylbithiophene on both sides, 1,4-bis-(1'-(2 ''-hexyl-5 ''-[2,2']bithienyl)ethenyl) benzene, was synthesized by Wittig reaction. The structure of obtained material was confirmed by NMR, FT-IR and mass, and the physical properties were characterized by UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated film was characterized by X-ray diffraction and atomic force microscopy (AFM). It forms highly ordered polycrystalline vacuum-evaporated film. It exhibits field-effect performances, with a hole mobility of 0.066 cm(2)/V and on/off ratio up to 4.61 x 10(5), and a subthreshold slope of 0.44 V when it was deposited at T-s = 90 degrees C on OTS-treated SiO2. (C) 2010 Elsevier B.V. All rights reserved.
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