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Synthesis and studies on 2-hexylbithiophene end-capped oligomer for OTFT

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dc.contributor.authorKang, Sohee-
dc.contributor.authorKang, Moon Seong-
dc.contributor.authorPark, Jong Won-
dc.contributor.authorKang, Pengtao-
dc.contributor.authorYi, Mi Hye-
dc.contributor.authorKwon, Soon-Ki-
dc.contributor.authorKim, Yun-Hi-
dc.date.accessioned2022-12-27T04:04:32Z-
dc.date.available2022-12-27T04:04:32Z-
dc.date.issued2010-11-
dc.identifier.issn1567-1739-
dc.identifier.issn1878-1675-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/24895-
dc.description.abstractThe new organic semiconductor which is composed of divinylbenzene core unit and hexylbithiophene on both sides, 1,4-bis-(1'-(2 ''-hexyl-5 ''-[2,2']bithienyl)ethenyl) benzene, was synthesized by Wittig reaction. The structure of obtained material was confirmed by NMR, FT-IR and mass, and the physical properties were characterized by UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated film was characterized by X-ray diffraction and atomic force microscopy (AFM). It forms highly ordered polycrystalline vacuum-evaporated film. It exhibits field-effect performances, with a hole mobility of 0.066 cm(2)/V and on/off ratio up to 4.61 x 10(5), and a subthreshold slope of 0.44 V when it was deposited at T-s = 90 degrees C on OTS-treated SiO2. (C) 2010 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.language.isoENG-
dc.publisherThe Korean Physical Society-
dc.titleSynthesis and studies on 2-hexylbithiophene end-capped oligomer for OTFT-
dc.typeArticle-
dc.publisher.location대한민국-
dc.identifier.doi10.1016/j.cap.2010.03.017-
dc.identifier.scopusid2-s2.0-78449307176-
dc.identifier.wosid000284306700019-
dc.identifier.bibliographicCitationCurrent Applied Physics, v.10, no.4, pp E166 - E170-
dc.citation.titleCurrent Applied Physics-
dc.citation.volume10-
dc.citation.number4-
dc.citation.startPageE166-
dc.citation.endPageE170-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordAuthorOrganic semiconductor-
dc.subject.keywordAuthorTFT (thin film transistor)-
dc.subject.keywordAuthorHole mobility-
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