Cited 2 time in
Synthesis and studies on 2-hexylbithiophene end-capped oligomer for OTFT
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Sohee | - |
| dc.contributor.author | Kang, Moon Seong | - |
| dc.contributor.author | Park, Jong Won | - |
| dc.contributor.author | Kang, Pengtao | - |
| dc.contributor.author | Yi, Mi Hye | - |
| dc.contributor.author | Kwon, Soon-Ki | - |
| dc.contributor.author | Kim, Yun-Hi | - |
| dc.date.accessioned | 2022-12-27T04:04:32Z | - |
| dc.date.available | 2022-12-27T04:04:32Z | - |
| dc.date.issued | 2010-11 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/24895 | - |
| dc.description.abstract | The new organic semiconductor which is composed of divinylbenzene core unit and hexylbithiophene on both sides, 1,4-bis-(1'-(2 ''-hexyl-5 ''-[2,2']bithienyl)ethenyl) benzene, was synthesized by Wittig reaction. The structure of obtained material was confirmed by NMR, FT-IR and mass, and the physical properties were characterized by UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated film was characterized by X-ray diffraction and atomic force microscopy (AFM). It forms highly ordered polycrystalline vacuum-evaporated film. It exhibits field-effect performances, with a hole mobility of 0.066 cm(2)/V and on/off ratio up to 4.61 x 10(5), and a subthreshold slope of 0.44 V when it was deposited at T-s = 90 degrees C on OTS-treated SiO2. (C) 2010 Elsevier B.V. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | Synthesis and studies on 2-hexylbithiophene end-capped oligomer for OTFT | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.1016/j.cap.2010.03.017 | - |
| dc.identifier.scopusid | 2-s2.0-78449307176 | - |
| dc.identifier.wosid | 000284306700019 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.10, no.4, pp E166 - E170 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 10 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | E166 | - |
| dc.citation.endPage | E170 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordAuthor | Organic semiconductor | - |
| dc.subject.keywordAuthor | TFT (thin film transistor) | - |
| dc.subject.keywordAuthor | Hole mobility | - |
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