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Electrical properties of ZnxMn3-xO4 ceramics for application as IR detectorsopen access
- Authors
- Kim, K.-M.; Lee, S.-G.; Lee, D.-J.
- Issue Date
- 2016
- Publisher
- Korean Institute of Electrical and Electronic Material Engineers
- Keywords
- Activation energy; IR detector; Responsivity; Solid state reaction method; ZnxMn3-xO4
- Citation
- Transactions on Electrical and Electronic Materials, v.17, no.4, pp 227 - 230
- Pages
- 4
- Indexed
- SCOPUS
ESCI
KCI
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 17
- Number
- 4
- Start Page
- 227
- End Page
- 230
- ISSN
- 1229-7607
2092-7592
- Abstract
- ZnxMn3-xO4 (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200°C for 12 h, cooled at a rate of 2°C /min to 800°C, and subsequently quenched to room temperature. We investigated the electrical properties of ZnxMn3-xO4 specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn1.10Mn1.90O4 specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×103 cmHz1/2/W, respectively. ? 2016 KIEEME. All rights reserved.
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