Electrical properties of ZnxMn3-xO4 ceramics for application as IR detectors

Abstract

ZnxMn3-xO4 (0.95≤x≤1.20) specimens were prepared using a conventional solid state reaction method. All specimens were sintered in air at 1,200°C for 12 h, cooled at a rate of 2°C /min to 800°C, and subsequently quenched to room temperature. We investigated the electrical properties of ZnxMn3-xO4 specimens with various amounts of ZnO for use as IR detectors. At a composition of x≥1.15, the ZnO phase precipitates beside the spinel structure. The electrical resistivity at room temperature, activation energy, responsivity, and detectivity of a Zn1.10Mn1.90O4 specimen are 653.2 kΩ-cm, 0.392 eV, 0.016 V/W, and 7.52×103 cmHz1/2/W, respectively. ? 2016 KIEEME. All rights reserved.