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A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme
- Issue Date
- Feb-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- SiC; Trench; Schottky; SBD; TSBS; Poly-Si
- Citation
- SOLID-STATE ELECTRONICS, v.140, pp 8 - 11
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 140
- Start Page
- 8
- End Page
- 11
- ISSN
- 0038-1101
1879-2405
- Abstract
- We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low workfunction material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.
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