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Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistorsopen access

Lee, Gyeongyeop; Ha, Jonghyeon; Kim, Kihyun; Bae, Hagyoul; Kim, Chong-Eun; Kim, Jungsik

ArticleIssue Date2022CitationMICROMACHINES, v.13, no.6PublisherMDPI
SCIESCOPUS
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET

Bae, Hagyoul; Lee, Geon Bum; Yoo, Jaewook; Lee, Khwang-Sun; Ku, Ja-Yun; Kim, Kihyun; Kim, Jungsik; Ye, Peide D.; Park, Jun-Young; Choi, Yang-Kyu

ArticleIssue Date2024CitationSolid-State Electronics, v.215PublisherPergamon Press Ltd.
SCIESCOPUS
On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FETopen access

Ha, Jonghyeon; Lee, Gyeongyeop; Bae, Hagyoul; Kim, Kihyun; Han, Jin-Woo; Kim, Jungsik

ArticleIssue Date2022CitationMICROMACHINES, v.13, no.8PublisherMDPI
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