미사일 발사대 유도전동기 제어를 위한 모듈 개발

Development of Insulated Gate Bipolar Transistor Module for Missile

초록

In this study, we designed and fabricated an insulated gate bipolar transistor (IGBT) module to control missilelauncher induction motors. This IGBT module was designed to receive digital voltage-level switching signalsfrom a microcontroller, thereby converting them into IGBT gate signals to operate the three-phase inverter of thebuilt-in 7-pack IGBT. In addition, an IGBT driver module was used to drive the regenerative braking IGBT, andsmoothing capacitors were applied to the DC link power rectified from the three-phase AC power, along withsnubber capacitors to prevent surge power from high-capacity IGBT switching signals and reduce EMI. Thismodule also included sensors to monitor the phase current and DC-link voltage for the control of the three-phaseinduction motor. The fabricated IGBT module was tested along with the IGBT driver module, and theexperimental results confirmed the smooth operation of the module. Therefore, the proposed IGBT module canbe effectively applied to motor controllers for missile launcher induction motor control.

키워드

IGBT Module(절연 게이트 양극성 트랜지스터 모듈)Three-phase Inverter(3상 인버터)Regenerativ Braking(회생제동)EMI Reduction(전자기파 간섭 저감)
제목
미사일 발사대 유도전동기 제어를 위한 모듈 개발
제목 (타언어)
Development of Insulated Gate Bipolar Transistor Module for Missile
저자
서세욱최승찬김갑순
DOI
10.14775/ksmpe.2024.23.12.030
발행일
2024-12
저널명
한국기계가공학회지
23
12
페이지
30 ~ 37