상세 보기
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
- Bae, Hagyoul;
- Lee, Geon Bum;
- Yoo, Jaewook;
- Lee, Khwang-Sun;
- Ku, Ja-Yun;
- ... Kim, Jungsik;
- 외 4명
Citations
WEB OF SCIENCE
2Citations
SCOPUS
2초록
The reliability of a β-Ga2O3 thin-film field-effect transistor is investigated under positive-bias stress (PBS). The transistor has a tri-gate structure with a gate dielectric of Al2O3. By characterizing low-frequency noise (LFN), the spatial distribution of trap in the gate dielectric was quantitatively extracted. The measured power spectral density (PSD) followed a 1/f-shape due to trapping and de-trapping of the channel carriers to and from the gate dielectric. Notably, the vertical distribution of the traps perpendicular to the interface of β-Ga2O3 and Al2O3 was mapped © 2024 Elsevier Ltd
키워드
Carrier number fluctuation; Low-frequency noise; Oxide traps; Power device; Wide bandgap; β-Ga<sub>2</sub>O<sub>3</sub> FET
- 제목
- Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET
- 저자
- Bae, Hagyoul; Lee, Geon Bum; Yoo, Jaewook; Lee, Khwang-Sun; Ku, Ja-Yun; Kim, Kihyun; Kim, Jungsik; Ye, Peide D.; Park, Jun-Young; Choi, Yang-Kyu
- 발행일
- 2024-05
- 유형
- Article
- 권
- 215