ScholarWorks@경상국립대학교

초록

The SiO2 films are widely used as sidewall spacers and insulating liners in microelectronic devices. One of the main challenges in depositing thin SiO2 films is precisely tuning their mechanical, optical, and electrical properties. Additionally, the films must be deposited in high aspect ratio structures for various applications. The properties of these films are determined by active species such as ions and radicals, as well as clusters formed by collisions between electrons and gaseous under certain conditions. To enhance the efficiency of thin film deposition and improve process control, we investigated plasma properties at different gas mixture ratios and pressures through two-dimensional fluid simulations of capacitively coupled Ar/O2 discharges. This study confirmed that as the mole fraction of O2 increases, the density of O2 + and O+ increases, which in turn increases the recombination reaction with O- . This provided insight into the behavior of each ion and radical.

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