Channel width-dependent Schottky barrier modulation in ambipolar charge-trap memory

초록

We demonstrate an ambipolar charge-trap (CT) memory device employing Schottky barrier (SB) source/drain contacts and investigate the impact of channel width (W-c) scaling on memory characteristics. The device exhibits dual n-and p-channel operation enabled by comparable Schottky barrier heights, allowing versatile memory functionality within a single cell. Efficient hot-carrier generation is achieved at relatively low drain voltages owing to the strong electric field concentrated at the SB contacts. The device shows enhanced program performance in n-channel operation, with similar to 1.5 times larger threshold voltage shift compared to p-channel operation. An increase in threshold voltage shift (Delta V-th) is observed with decreasing W(c)for both polarities. An effective Schottky barrier height (SBH) analysis reveals that this behavior originates from W-c-dependent modulation of the effective SBH, which enhances carrier injection efficiency. These results establish a direct correlation between device geometry and SBH, providing a key design strategy for scalable and high-performance charge-trap memory devices.

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